http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9118006-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_365ac307f871f5b902e62a4f1cae9da6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-143 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-149 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d5fe2035eaf093e5edbd9fdcb34221b |
| publicationDate | 2015-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9118006-B1 |
| titleOfInvention | Carbon-chalcogenide variable resistance memory device |
| abstract | A variable resistance memory device that includes a first electrode, a second electrode, and a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer including carbon incorporated into germanium selenide chalcogenide glass. The variable resistance memory device may include a second chalcogenide material layer between the first chalcogenide material layer and the second electrode. The variable resistance memory device may include a first metallic layer between the second chalcogenide material layer and the second electrode. The variable resistance memory device may include a third chalcogenide material layer between the first metallic layer and the second electrode. The variable resistance memory device may include a fourth chalcogenide material layer between the first chalcogenide material layer and the first electrode. The first chalcogenide layer may be formed by co-sputtering carbon with Ge 40 Se 60 . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11003981-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651379-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186657-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10340447-B2 |
| priorityDate | 2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.