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publicationDate 2015-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9111938-B2
titleOfInvention Copper interconnect with CVD liner and metallic cap
abstract A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.
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