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Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationCPCInventive |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 |
| filingDate |
2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc94361aa0ec022936d58e6d12e8a6e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_826b4a7de7875602d334b86fca131fc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_187eaa502e4d2780f24df2d238cb1df2 |
| publicationDate |
2015-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9105742-B1 |
| titleOfInvention |
Dual epitaxial process including spacer adjustment |
| abstract |
A multi-gate semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first gate stack having first spacers formed on opposing sides thereof. The second semiconductor structure includes a second gate stack having second spacers formed on opposing sides thereof. First elevated source/drain regions abut the first spacers to define a first effective S/D distance between the first gate stack and the first elevated source/drain regions. Second elevated source/drain regions abut the second spacers to define a second effective S/D distance between the second gate stack and the second elevated source/drain regions. The second effective S/D distance is equal to the first effective S/D distance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109300789-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10340385-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109300789-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10461188-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110534433-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108807270-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9876032-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3042907-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110098150-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108010881-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108010881-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110098150-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110534433-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3316288-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3327765-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108807270-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9806078-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10797177-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9443855-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031396-B2 |
| priorityDate |
2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |