http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9105686-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17e05b12e0930544104ae431ecb38166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_540f61448dcd84258d85fa331960b334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25a551e6692d7a3e93a233c3c67be7b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f42c7b99f5a89ac020df6d0456de0e5a |
| publicationDate | 2015-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9105686-B2 |
| titleOfInvention | Fabrication of localized SOI on localized thick box using selective epitaxy on bulk semiconductor substrates for photonics device integration |
| abstract | Photonic devices are created by laterally growing a semiconductor material (i.e., a localized semiconductor-on-insulator layer) over a localized buried oxide (BOX) created in a semiconductor by either a trench isolation process or thermal oxidation. In one embodiment, and after trench formation in a semiconductor substrate, the trench is filled with oxide to create a localized BOX. The top surface of the BOX is recessed to depth below the topmost surface of the semiconductor substrate to expose sidewall surfaces of the semiconductor substrate within each trench. A semiconductor material is then epitaxially grown from the exposed sidewall surfaces of the semiconductor substrate. |
| priorityDate | 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.