| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| filingDate |
2014-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5503baca9acad86b76465607daffa2ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b342fdd882f4bb96e802bd6710449eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_854d4ee607a397f4b78ce961005d680b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e0e1662ddce5832246fe4fbcadc074c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87110b1185d47def2ad9edf982031351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2500d328375eea93d8a828aad41ca386
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cba786b9772791f5c4b1497fce0376d5 |
| publicationDate |
2015-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9099380-B2 |
| titleOfInvention |
Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device |
| abstract |
A methodology enabling the formation of steep channel profiles for devices, such as SSRW FETs, having a resultant channel profiles that enables suppression of threshold voltage variation and the resulting device are disclosed. Embodiments include providing STI regions in a silicon wafer; performing a deep well implantation of a dopant into the silicon wafer between STI regions; forming a recess in the doped silicon wafer between the STI regions; performing a shallow well implantation of the dopant into the silicon wafer in the recess; and forming Si:C on the doped silicon wafer in the recess. |
| priorityDate |
2013-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |