| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c7041c98a692745abf1c458f493a930
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14961a37873da916c8b73c3d3fb6a809
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6c09cd8246ab8acae455c9b91e2b122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9904bf81e8a9cab7687c79acbd2f8f1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e1c660179935c4cddcbbda6d455b71d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 |
| filingDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a2e0edea8a2da8813130dca147f0cc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed086c6b8e67b26efb0835e378048e18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a06a26c3cbd5ed63f348d2f35c2e9a1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f33fee5ffe89ca26a19f24d81479700 |
| publicationDate |
2015-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9093596-B2 |
| titleOfInvention |
Epitaxial wafer for light emitting diode, light emitting diode chip and methods for manufacturing the same |
| abstract |
An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided. |
| priorityDate |
2009-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |