| abstract |
A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF 3 C≡CX where X is H, F, Cl, Br, I, CH 3 , CFH 2 or CF 2 H; and either of: (B) at least one kind of gas selected from the group consisting of O 2 , O 3 , CO, CO 2 , COCl 2 and COF 2 ; (C) at least one kind of gas selected from the group consisting of F 2 , NF 3 , Cl 2 , Br 2 , I 2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF 4 , CHF 3 , C 2 F 6 , C 2 F 5 H, C 2 F 4 H 2 , C 3 F 8 , C 3 F 4 H 2 , C 3 ClF 3 H and C 4 F 8 . This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation. |