| abstract |
The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of B w Al x Ga y In z N, (c2) growth of a layer of B w Al x Ga y In z N, (c3) growth of an intermediate layer of B w Al x Ga y In z N, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN. |