| abstract |
A coating composition is provided. The coating composition comprises (a) an aluminum oxide precursor and (b) a solvent, wherein the aluminum oxide precursor (a) comprises aluminum elements and the following groups bound thereon:n (a1) a —OR 1 group, wherein R 1 is H or a substituted or unsubstituted C1 to C13 alkyl; (a2) a bidentate chelating group; and (a3) a tetrahedral coordinating group,n nwherein, the amount of the aluminum oxide precursor (a) is about 1 wt % to about 50 wt %, based on the total weight of the composition, and the total amount of the groups (a1), (a2) and (a3) is no more than 3 moles per 1 mole of the aluminum elements. The coating composition can be used in a semiconductor process for providing a passivation layer. |