| abstract |
A semiconductor memory device has a cover film ( 5 ), between a memory cell (gate electrode 4 , and source and drain regions 2 a and 2 b ) and an interlayer insulating film ( 6 ), the cover film covering the memory cell, wherein the cover film ( 5 ) has a hydrogen storage film ( 5 a ) that is a coating film on a surface of a silicon nitride film ( 5 b ), and in addition, has a hydrogen storage film ( 5 c ) on a bottom surface of the silicon nitride film ( 5 b ). The hydrogen storage films ( 5 a and 5 b ) are silicon nitride oxide films that include Si 2 N 2 O. By suppressing diffusion of hydrogen atoms to a memory cell from an interlayer insulating film, reliability of operation of the memory cell is improved. |