| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30612 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate |
2013-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebe0ebc5020abca43b66242ac419e7a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6147e5dfd3b721ca7f0cf5a6c0280cb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe8e766b16369e6615572dd2537c54e |
| publicationDate |
2015-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9082690-B2 |
| titleOfInvention |
High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate |
| abstract |
A method of removing a plurality of semiconductor device layers from an underlying base substrate. A multilayered stack including alternating layers of sacrificial material layers and semiconductor material layers is formed on a base substrate. Each successive sacrificial material layer that is formed is thicker than the previously formed sacrificial material layer. An etch is then performed that first removes the thickest sacrificial material layer of the multilayered stack. The uppermost semiconductor device layer within the multilayered stack is accordingly first released. As the etch continues, the other sacrificial material layers are removed sequentially, in the order of decreasing thickness, and the other semiconductor device layers are removed sequentially. |
| priorityDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |