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publicationDate 2015-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9076721-B2
titleOfInvention Oxynitride channel layer, transistor including the same and method of manufacturing the same
abstract A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.
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