| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate |
2013-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_821df38b6594f477c36c048d579f37a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6daeb6c8a692a5a2c093b71dc665c4f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15542243a9776bf652e2e34ea107635d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5b96ffea60b374595ee83ce1a0a1090 |
| publicationDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9059398-B2 |
| titleOfInvention |
Methods for etching materials used in MRAM applications |
| abstract |
Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108232004-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263078-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985202-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014017518-A1 |
| priorityDate |
2012-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |