| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f4e2b777b1453b4137c169269f40e87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2e0dc06305136d411cb17c692f0cca00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cea8dbe61b43fd71e0c4025d95ea862d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf51fddc5d49f8f82899d45e4bcfdb73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e6b3d78746b3ccc839fcb96db3264ff |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1374bbb7631970a07214a32cd57a962
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20b5fe24c0a3a42cd9267ae760266262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20a8faef60d50ed845da764a26e03040
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c92e30fff477eef900caa2c336f5d3eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0a129d5722c8f8399b97914b786fdb |
| publicationDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9059207-B2 |
| titleOfInvention |
Strained channel for depleted channel semiconductor devices |
| abstract |
A planar semiconductor device including a semiconductor on insulator (SOI) substrate with source and drain portions having a thickness of less than 10 nm that are separated by a multi-layered strained channel. The multi-layer strained channel of the SOI layer includes a first layer with a first lattice dimension that is present on the buried dielectric layer of the SOI substrate, and a second layer of a second lattice dimension that is in direct contact with the first layer of the multi-layer strained channel portion. A functional gate structure is present on the multi-layer strained channel portion of the SOI substrate. The semiconductor device having the multi-layered channel may also be a finFET semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456370-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349011-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342442-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342441-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342438-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374106-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793403-B2 |
| priorityDate |
2012-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |