| abstract |
A semiconductor device ( 100 ) includes a leadframe having a chip pad ( 110 ) and a lead ( 111 ) with a first end ( 112 ) proximate to the pad and a second end ( 113 ) remote from the pad, the leadframe having a base metal ( 120 ) including copper and a stack of a plated first layer ( 121 ) of nickel in contact with the base metal and a plated second layer ( 122 ) of a noble metal in contact with the nickel layer, the second lead end free of the noble metal. Further included is a copper wire ( 104 ) having a ball bond ( 104 a ) on a semiconductor chip ( 101 ) attached to the chip pad, and a stitch bond ( 104 b ) on the proximate lead end, the stitch bond penetrating the second layer; furthermore a packaging compound ( 130 ) encapsulating the chip, the wire, and the first end of the lead, the compound leaving the second end of the lead un-encapsulated; and the unencapsulated second lead end covered with a plated third layer ( 123 ) of solder. |