Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate |
2013-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b9f06a0e3d55b3dee2158aa2e84d441 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0a3daf6bf09aaca71c79bcafdd08f18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c959559d13651a3d0d40843e1cc49fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6df59030eaa7a5dd087e2114f872b05a |
publicationDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9059039-B2 |
titleOfInvention |
Reducing wafer bonding misalignment by varying thermal treatment prior to bonding |
abstract |
A bonding layer of the first wafer article is thermally treated and a bonding layer of a second wafer article is thermally treated in accordance with first and second process parameters, respectively prior to bonding the first wafer article with the second wafer article. First and second grid distortion in the first and second wafer articles is measured and a difference is determined between the first and second grid distortions. A prediction is made for maintaining the difference within a prescribed tolerance. At least one of the first process parameters and the second process parameters can be conditionally varied in accordance with the prediction. The thermally treating of the first wafer article and the thermally treating of the second wafer article can then be performed with respect to another pair of the first and second wafer articles prior to bonding the another pair of wafer articles to one another through their respective bonding layers. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002900-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243016-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10236317-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466538-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9881956-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017323920-A1 |
priorityDate |
2013-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |