| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdb1c52baad0525933a023c74639ecda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a57b7d5af9ec42673b89b1f25488a1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c7bf1d48433650f1ee84966a9b6add
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a285fa04f6ede08b02ac67a89e7ef1a |
| publicationDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9058990-B1 |
| titleOfInvention |
Controlled spalling of group III nitrides containing an embedded spall releasing plane |
| abstract |
A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11361999-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016020284-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016284930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE49677-E
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9865769-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653554-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245747-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9455180-B1 |
| priorityDate |
2013-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |