| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_520ca78aba6f3b3a9764c4436fb608cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e6b3d78746b3ccc839fcb96db3264ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf51fddc5d49f8f82899d45e4bcfdb73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_52ecf3a2e70748310980c2689515952a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41708 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7371 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2011-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65f30d9ef6a4fb20608e57bb5a5ece1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86d0336818e9078ac6dc348fc77dcdf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8f7e9ffb0f744ba359c0eb28ba11ce4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7cd7360f94158940da31bfa7a31721f |
| publicationDate |
2015-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9053939-B2 |
| titleOfInvention |
Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling |
| abstract |
A heterojunction bipolar transistor (HBT) may include an n-type doped crystalline collector formed in an upper portion of a crystalline silicon substrate layer; a p-type doped crystalline p + Si 1-x Ge x layer, formed above the n-type doped collector, that forms a p-type doped internal base of the HBT; a crystalline silicon cap formed on the p-type doped crystalline p + Si 1-x Ge x layer, in which the crystalline silicon cap includes an n-type impurity and forms an n-type doped emitter of the HBT; and an n-type doped crystalline silicon emitter stack formed within an opening through an insulating layer to an upper surface of the crystalline silicon cap. |
| priorityDate |
2011-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |