| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e70c0aeade92d7571d955d3b90ea06e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2013-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_214e852a36b1d708ee1697300a68be13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdb3009a729bb657d649edf76db65624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04dcfe19dda252ca5d7390099e9bdb9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d1ee9c630739e29d4a6640bf84deb03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b37f4db304b13fbdc51a5390a09f2d88 |
| publicationDate |
2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9048374-B1 |
| titleOfInvention |
Method for manufacturing an interdigitated back contact solar cell |
| abstract |
A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015187968-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10784383-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9306088-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9246029-B2 |
| priorityDate |
2013-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |