http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048176-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70b7a773a3dfb29b83e441bc0951f9d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_521f933c919458f149f88d61b8816469 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2409 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L47-00 |
| filingDate | 2012-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77461c33d281c7c03b288b445810ec52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e346bfe1f6a90b87a1e857f0a59708bb |
| publicationDate | 2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9048176-B2 |
| titleOfInvention | Nonvolatile storage device |
| abstract | According to one embodiment, a method for manufacturing a nonvolatile storage device. The device includes a plurality of first conductive layers each extending in a first direction, a plurality of second conductive layers each extending in a second direction and spaced from the first layers, and memory cells each provided between the first layers and the second layers and including a rectifying element including a semiconductor layer, and a variable resistance element stacked with the rectifying element. The method includes a film formation step, a heating step and a patterning step. The film formation step is configured to form a rectifying element material film including an amorphous semiconductor film. The heating step is configured to heat the rectifying element material film. The patterning step is configured to form the rectifying element including the semiconductor layer by patterning the rectifying element material film after the heating step. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016052978-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019263873-A1 |
| priorityDate | 2011-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.