Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D487-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D407-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B44C1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D487-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D407-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22 |
filingDate |
2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cb73d2f3d5841f9c78cfa6e04352ca6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0305e2f04d12d07c030e5945c9875672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be9de5fc73a4adfbda4cc358da8f2cb2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dbb4489846249f202c5ba84a758e40e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e64682163acb8987df02936111ed68e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8480941479d47c204fa40dcbe910dc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f45ea5312ac5cbb4cae0db2928c4f80 |
publicationDate |
2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9046769-B2 |
titleOfInvention |
Pattern-forming method, and composition for forming resist underlayer film |
abstract |
Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid. |
priorityDate |
2011-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |