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filingDate 2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9034698-B2
titleOfInvention Semiconductor device manufacturing method
abstract A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl 2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl 2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.
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