| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fae69d3424c2ff03f8b25476005a0c46 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0caf0c323a234381fc3c7ca96cc06e03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6df8de117173c0b3cf99fe87538e2d97 |
| publicationDate |
2015-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9029914-B2 |
| titleOfInvention |
Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound |
| abstract |
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N) and a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N). The IC device may further include a gate terminal and a gate dielectric layer disposed between the gate terminal and the barrier layer and/or between the gate terminal and the buffer layer. In various embodiments, the gate dielectric layer may include a fluoride- or chloride-based compound, such as calcium fluoride (CaF 2 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015214127-A1 |
| priorityDate |
2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |