http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9029832-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2013-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eacf98b50d4b41c9b595d46fa406bc7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0374837e82456b750841574c68f4d25 |
| publicationDate | 2015-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9029832-B2 |
| titleOfInvention | Group III nitride semiconductor light-emitting device and method for producing the same |
| abstract | The invention provides a Group III nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first ESD layer, a second ESD layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode N 1 , a p-type electrode P 1 , and a passivation film F 1 . The second ESD layer has pits X having a mean pit diameter D. The mean pit diameter D is 500 Å to 3,000 Å. An InGaN layer included in the n-side superlattice layer has a thickness Y satisfying the following condition: −0.029×D+82.8≦Y≦−0.029×D+102.8. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522716-B2 |
| priorityDate | 2012-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.