| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_553a466c07d79b3c10f69b47ced20e51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4bbf3a6b73121502c9bb255294743f50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_178c404a9ab23db791f33502a8d76324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9af9613d1757b0eb5ff12fd212b4aaf0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9dba4c642ea22ddd135d2233f9b172e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43fcc09ac536b68aa0671877fef2fa83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-06 |
| filingDate |
2011-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5857708d6ea474f0b01868978fcd528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e90b87c3cae88c52bd0bfb09fcbd84f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_513d5848e45f5102f98105421ff97381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66c480034aedb7350299f7645e94c0e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfd943ea9b653658bb88468ed3058c20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b16a16ec9a13d1b63dac833dbcb35dbf |
| publicationDate |
2015-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9018677-B2 |
| titleOfInvention |
Semiconductor structure and method of forming the same |
| abstract |
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A carrier channel depleting layer is disposed on the second III-V compound layer. The carrier channel depleting layer is deposited using plasma and a portion of the carrier channel depleting layer is under at least a portion of the gate electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10115813-B2 |
| priorityDate |
2011-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |