| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f34119b232d292c72e632b62008eca90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4071d1aa00f4a5dd65254120e245f232 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21H1-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21H1-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-115 |
| filingDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a4df84ee5d3f1a2000941cc9fa0484c |
| publicationDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9006955-B2 |
| titleOfInvention |
High-energy beta-particle source for betavoltaic power converter |
| abstract |
A power converter comprises a nuclear radiation emitter having a first side and a second side, wherein the nuclear radiation emitter comprises a radiation-emitting radioisotope, a plurality of semiconductor substrates disposed over the first side of the nuclear radiation emitter, wherein each of the plurality of semiconductor substrates comprises a junction for converting nuclear radiation particles to electrical energy, and at least one high-density layer, wherein the high density layer has a density that is higher than a density of the semiconductor substrates, and wherein the high-density layer is disposed between two of the plurality of semiconductor substrates. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189390-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I814126-B |
| priorityDate |
2011-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |