Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04953 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2013-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a535fbb4aafbbe826256d608a97db24f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_660832d40adde1bd50a1d142857eb348 |
publicationDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9006900-B2 |
titleOfInvention |
Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the same |
abstract |
A connective structure for bonding semiconductor devices and methods for forming the same are provided. The bonding structure includes an alpad structure, i.e., a thick aluminum-containing connective pad, and a substructure beneath the aluminum-containing pad that includes at least a pre-metal layer and a barrier layer. The pre-metal layer is a dense material layer and includes a density greater than the barrier layer and is a low surface roughness film. The high density pre-metal layer prevents plasma damage from producing charges in underlying dielectric materials or destroying subjacent semiconductor devices. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666545-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9385081-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015179565-A1 |
priorityDate |
2013-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |