http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006779-B2

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filingDate 2012-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61bfb7c21da2b9db58634105de259a70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58f757f2f20546acd03d261d67ddcca7
publicationDate 2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9006779-B2
titleOfInvention Nitride semiconductor light-emitting element having superior leakage current blocking effect and method for manufacturing same
abstract Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an Al x Ga (1-x) N layer, and the Al content x times layer thickness (μm) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.
priorityDate 2011-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 39.