| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70fa22de5846118b140c66f4fe004632 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-3445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate |
2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ec9f72248878ccd166950c356b6e6ab |
| publicationDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9005367-B2 |
| titleOfInvention |
Resist stripping compositions and methods for manufacturing electrical devices |
| abstract |
A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11251169-B2 |
| priorityDate |
2009-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |