| Predicate |
Object |
| assignee |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c619effe61ba66c6c64554aabe3dd21a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fe0242912b39753f7c9644c5cc1fd66 |
| classificationCPCAdditional |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6719
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
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| classificationIPCAdditional |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2010-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c57190341d4a2f24e6082dd37ad7e37b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06412048d1db100231ea44b8c16bf9a9 |
| publicationDate |
2015-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8999798-B2 |
| titleOfInvention |
Methods for forming NMOS EPI layers |
| abstract |
NMOS transistors having controlled channel strain and junction resistance and methods for the fabrication of same are provided herein. In some embodiments, a method for forming an NMOS transistor may include (a) providing a substrate having a p-type silicon region; (b) depositing a silicon seed layer atop the p-type silicon region; (c) depositing a silicon-containing bulk layer comprising silicon, silicon and a lattice adjusting element or silicon and an n-type dopant atop the silicon seed layer; (d) implanting at least one of the lattice adjusting element or the n-type dopant which is absent from the silicon-containing bulk layer deposited in (c) into the silicon-containing bulk layer; and (e) annealing the silicon-containing bulk layer with an energy beam after implantation in (d). In some embodiments, the substrate may comprise a partially fabricated NMOS transistor device having a source/drain region defined therein. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11649559-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015221730-A1 |
| priorityDate |
2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |