| abstract |
Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for “SiC”, SiN” and “SiC x N y ” films; and tunable removal selectivity for “SiC” in reference to SiO 2 , “SiN” in reference to SiO 2 , “SiC” in reference to “SiN”, or “SiC x N y ” in reference to SiO 2 ; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %. |