| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2013-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d9371c6a0039efc8de8c3bf3acbc768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d66501f4d30a4a077676af606e9315a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00ce9d5a55c9464556bba6a4f12c24f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6206e07b7f21898508847eaed11c98c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f53894397847d4e3d65836645291ec71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3ebec553470c9203d4576258e4a81b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b590dee703d282e8b5ea340ee12aa9c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa09c3bcd929e9f0f0b3d33021384f2 |
| publicationDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8993452-B2 |
| titleOfInvention |
Method of patterning a metal gate of semiconductor device |
| abstract |
Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process. |
| priorityDate |
2008-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |