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filingDate 2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9078197d95251607106ae0e8a04e8110
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publicationDate 2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8987856-B2
titleOfInvention Photodiode having N-type and intrinsic amorphous IGZO layers
abstract A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.
priorityDate 2011-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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