| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e73b6c6647e4065ba96750b0a719ca45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_67ddb426ec27b4566aa864c9a6ed9d1c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d26d827aade1e73d24fe6dc3ae6968c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6d46d927ff7c2fb5ef8a8192f3fa82b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate |
2011-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_052b4fb2279a00301e653c473b59e05b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65e86afc37f5d3a652e7c984d8ea9e0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95e08688e59effa47ea3c661141d0fb4 |
| publicationDate |
2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8986448-B2 |
| titleOfInvention |
Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method |
| abstract |
To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019376206-A1 |
| priorityDate |
2010-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |