| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate |
2014-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce7286f31792c587fbef68715baf2024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e1057260002686ccee8a8259448f147 |
| publicationDate |
2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8981431-B2 |
| titleOfInvention |
Semiconductor light emitting device including GaAs substrate |
| abstract |
A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm. |
| priorityDate |
2007-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |