| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66a7fe34e505381151a34781f69daf15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23ed27b281005712333a8a9f6cb2546d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c9af3cb3ffa46bffc6597a618dfb06b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b182a0bcfa4acdc4b8e6180795c87cbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2011-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba5255bc6bfa026d02c21b78c65300de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86f8c7c7485674ec83f2efe16c30fdd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baab3f8009d225329c35152939a8d119
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3916f5d492b30e19c14768deaf2b073c |
| publicationDate |
2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8980754-B2 |
| titleOfInvention |
Method of removing a photoresist from a low-k dielectric film |
| abstract |
Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014187035-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10062602-B2 |
| priorityDate |
2011-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |