| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2013-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48ac4bbc62947ff5104402bbeb0a9a1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf4b0b9bfe5c6c380b73db26ae5f20a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc48af28f115d440477c034a404bac58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_808ae908f8788b382f05990bdcf80e85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87f7d6233cd35a52321b4334e77bd69c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3818b578d5ab81abdb46a53f5713e57 |
| publicationDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8975641-B1 |
| titleOfInvention |
Transistor having an ohmic contact by gradient layer and method of making the same |
| abstract |
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a gradient having a first concentration of a first material at an interface with the channel layer and a second concentration of the first material at a surface opposite the channel layer, and the first concentration is higher than the second concentration. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023123907-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107093628-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107093628-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868134-B2 |
| priorityDate |
2013-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |