| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-131 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-8426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-846 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
| filingDate |
2013-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2015-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8969906-B2 |
| titleOfInvention |
Active matrix electroluminescent device within resin sealed housing |
| abstract |
In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9620573-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563201-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9876033-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015255524-A1 |
| priorityDate |
1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |