Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
filingDate |
2013-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_689d962277b9027a64f7092d809c3f60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e99650f2c30ad4bdf2eb82c716425bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a52a3499743e50d7898691edd97b2b7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82f61c624d753557d2fa35b370058c02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a11a5e59deaf200e9ed5a8a6ec71494 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be0c1880fe04e4604ee0cf6238ddce3a |
publicationDate |
2015-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8969882-B1 |
titleOfInvention |
Transistor having an ohmic contact by screen layer and method of making the same |
abstract |
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a first portion and a screen layer over the first portion. The transistor includes a metal layer over the screen layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269949-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018053839-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964804-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019245074-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812562-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868134-B2 |
priorityDate |
2013-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |