Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e0f37c3b1f5a879c8996782cdae8cde http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94b3dbfd928fe47e1d2a2ee3454d3b72 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-50 |
filingDate |
2012-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf2f19dc69ab06da8f8c51fa5bd7a679 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_425a91296e7e5e38aa6217871c60f4bd |
publicationDate |
2015-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8941240-B2 |
titleOfInvention |
Fabricating a contact rhodium structure by electroplating and electroplating composition |
abstract |
A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure. |
priorityDate |
2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |