http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8940103-B2

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1937837beb7881ff030d40e49a7ce3d8
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-423
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
filingDate 2012-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08b862a708f5a0e6fef47696cdd8c76
publicationDate 2015-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8940103-B2
titleOfInvention Sequential stage mixing for single substrate strip processing
abstract Provided is a method for a resist removal system comprising a processing chamber and treatment liquid delivery system for single substrate processing. A primary stripping chemical is flowed in the treatment liquid delivery system at a primary temperature and flow rate; a secondary stripping chemical is injected at a first mixing point at a secondary temperature and flow rate. A tertiary stripping chemical is injected at a second mixing point at a tertiary temperature and a tertiary flow rate. The treatment liquid is dispensed onto a portion of the surface of the substrate wherein one or more of the primary temperature, secondary temperature, tertiary temperature, the primary flow rate, the secondary flow rate, and the tertiary flow rate are adjusted to meet a target strip rate and selectivity of strip over etch of silicon nitride and silicon oxide.
priorityDate 2012-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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