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filingDate 2014-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8925562-B1
titleOfInvention Substrate processing apparatus and method of manufacturing semiconductor device
abstract A substrate processing apparatus includes a first gas supply system provided with a source gas supply control unit; a second gas supply system provided with a reactive gas supply control unit; a third gas supply system provided with a cleaning gas supply control unit; a shower head unit including a buffer chamber connected to the gas supply systems and a dispersion plate installed at a downstream side of the buffer chamber; a substrate support installed at a downstream side of the dispersion plate and electrically grounded; a process chamber accommodating the substrate support; a plasma generation unit including a power supply and a switch configured to switch plasma generation between the buffer chamber and the process chamber; and a control unit configured to control the source gas supply control unit, the reactive gas supply control unit and the plasma generation unit.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9340879-B2
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priorityDate 2014-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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