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filingDate 2013-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8921932-B2
titleOfInvention Semiconductor device
abstract The substrate is made of a compound semiconductor and has a plurality of first recesses, each of which opens at one main surface thereof and has a first side wall surface. The gate insulating film is disposed on and in contact with the first side wall surface. The gate electrode is disposed on and in contact with the gate insulating film. The substrate include: a source region having first conductivity type and disposed to face itself with a first recess interposed therebetween, when viewed in a cross section along the thickness direction; and a body region having second conductivity type and disposed to face itself with the first recess interposed therebetween. Portions of the source region facing each other are connected to each other in a region interposed between the first recess and another first recess adjacent to the first recess, when viewed in a plan view.
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