| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0a3d10ed9477633fd2c07c6da61dc49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6a79989880fe03cf533b7d6da62b60f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03f3ffc4306dbdd9fe9ef93b0d7cd7c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6d795182f8f0775a891a3a1f78669dd1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac1389b04ac2b13bc80e1df8bbd84b0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_55c25389d7bba318937762088dfb7fc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ed3ad8f844a322be4e471f9e8d7f0ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e1cd4a20fe64493535d986ccd3a092a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2012-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b31c502ae638c267a68490e466d84498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60e449dcb6d544d5ea2a78a7036cbdf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c27db94bfb35dcb3cb5efc87e0ee1ca6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33b03597cd376cbf2365397f3c6a5be3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_609f75fcb29c5e30c5e5fcc9afeaf16e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dab733b54e98aa3bbb9727544c936c27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_831f85f0741b9e26fd487de80bf37537 |
| publicationDate |
2014-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8921171-B2 |
| titleOfInvention |
Method for forming gate structure, method for forming semiconductor device, and semiconductor device |
| abstract |
A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on the substrate; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming a first work function adjustment layer on the oxygen scavenging element layer; etching the first work function adjustment layer above the nMOSFET area; forming a second work function adjustment layer on the surface of the substrate; metal layer depositing and annealing to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches. |
| priorityDate |
2012-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |