| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42b06218460a979fbdebed348e7f6578 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8f08c8667462909f7b2988f2e62bbe8 |
| publicationDate |
2014-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8916483-B2 |
| titleOfInvention |
Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum |
| abstract |
Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride at one or more surfaces of the substrate, and a layer of GaN bonded to the molybdenum nitride. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016365438-A1 |
| priorityDate |
2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |