| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2013-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_858b89c57c0d4bac68cc3bfbec553e8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe0dc0741ddb13d5f81829b53bd5462a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c0d0275a8d1c4ab527c1e5a06e5ece3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e24ee7aa6294abecea582441d1f118de |
| publicationDate |
2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8912607-B2 |
| titleOfInvention |
Replacement metal gate structures providing independent control on work function and gate leakage current |
| abstract |
The thickness and composition of a gate dielectric can be selected for different types of field effect transistors through a planar high dielectric constant material portion, which can be provided only for selected types of field effect transistors. Further, the work function of field effect transistors can be tuned independent of selection of the material stack for the gate dielectric. A stack of a barrier metal layer and a first-type work function metal layer is deposited on a gate dielectric layer within recessed gate cavities after removal of disposable gate material portions. After patterning the first-type work function metal layer, a second-type work function metal layer is deposited directly on the barrier metal layer in the regions of the second type field effect transistor. A conductive material fills the gate cavities, and a subsequent planarization process forms dual work function metal gate structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011233065-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109629-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013005156-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532624-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784187-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289478-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319427-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10177042-B2 |
| priorityDate |
2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |