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filingDate 2014-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8912565-B2
titleOfInvention Light emitting diode and method for manufacturing the same
abstract A light emitting device is provided, including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes. The first semiconductor layer has a step-down region such that one of the plurality of electrodes is placed on the first semiconductor layer. The light emitting device includes a substrate including a first portion having a flat top surface, a second portion having a flat bottom surface and disposed under the first portion, and a side portion disposed between the first portion and the second portion. An area of the flat top surface of the first portion is larger than an area of the flat bottom surface of the second portion.
priorityDate 2006-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 43.