| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10e8de8d43708bc714db5bb521c8d375
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ec51857845bfeff6accf996a5d6b167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06a27c07272525104cbb74c594c195ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3d6fa926ef6ac3947565c2d90afae18 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J47-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T3-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J47-02 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J47-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T3-00 |
| filingDate |
2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58939f30ea560b97c3db7046fea3ffdd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38aa6f0e433859a60d763c7b43a273eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2d48cab94fd41c4311753a1b5fdbc9f |
| publicationDate |
2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8912502-B2 |
| titleOfInvention |
Ion chamber based neutron detectors |
| abstract |
A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. The distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11366116-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11130129-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10478818-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10627366-B2 |
| priorityDate |
2007-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |