| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5359c2ede5566663bae1c01b3c7a889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6c2e66eea7cfe5326be8d99da7c8116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3938fddb60745d3d76e1a01daff51d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1107f3f6f3a32c62ed485e03f729c649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2c321c5b9b5774498f194d959bdf9df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2a456a2f3ba6e7172d1faf97e7ce7d7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| filingDate |
2012-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_098fb0bada0761c6cde3628233c3c0ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f934811891764c34b75e374b937ef959
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc9324abf08b43a30569f64dc3165342
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6a5ed8246214be9498102bf1695cf91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_092981b8418fa471dce3cf4634f5c888 |
| publicationDate |
2014-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8901606-B2 |
| titleOfInvention |
Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer |
| abstract |
A pseudomorphic high electron mobility transistor (pHEMT) comprises: a substrate comprising a Group III-V semiconductor material; buffer layer disposed over the substrate; and a channel layer disposed over the buffer layer. The buffer layer comprises microprecipitates of a Group V semiconductor element. A method of fabricating a pHEMT is also described. |
| priorityDate |
2012-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |