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titleOfInvention Stacked structure organic light-emitting transistors
abstract The present stacked structure organic light-emitting transistors include new arrangements of electrodes that can favor carrier recombination and exciton formation. More specifically, the stacked structure includes a substrate, a gate electrode, a channel layer having one or more organic sublayers, a dielectric layer positioned between the gate electrode and the channel layer, and a hole electrode and an electron electrode that are spaced apart from each other at a planar distance defining the length of a channel region in between. Each of the hole electrode and the electron electrode is positioned either within the channel layer or on top of a first side of the channel layer. Additionally, the hole electrode and the electron electrode are positioned away from a second side of the channel layer at different distances.
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